Název projektu:
Flexible Silicon Carbide Foundry (10 GB 46P4 3GSJ)
Popis:
A multi-national electronics company based in Scotland (UK) offers its unique expertise and foundry for silicon carbide (SiC). The company has the ability to support technology startups through postincubation to commercialisation as well as companies looking to transfer processes to a qualified production fab The company is developing a high temperature SiC Integrated Circuit process utilising the properties of SiC to achieve high temperature operation above 300ºC, with process design aim 450ºC.
Požadavky na partnera:
A multinational electronics company with a base in Scotland offers a production Silicon Carbide (SiC) foundry capable of processing up to 4" substrates and is able to offer a flexible approach to development and fabrication of SiC devices.
The Scottish site has significant experience in the development, co-development and manufacturing transfer of silicon and non-silicon processes allowing horizontal development to SiC processing techniques and device processes.
Recent work includes development of a high temperature SiC IC (Integrated Circuit) process utilising existing CMOS (Complementary metal oxide semiconductor) techniques and technology, developing onto SiC substrates. Aim is to develop a process capable of device operation above 300ºC, target 450ºC.
The company has a long history in the support of technology startups through postincubation to commercialisation.
Innovative Aspects:
The company has over 6 years SiC processing experience.
Benefits
-----------
(1) Extensive process engineering experience in silicon carbide
(2) Processes co-developed for manufacture in the company's qualified CMOS wafer fab on 3" & 4" Substrates
(3) Maximises customers own Intellectual Property
(4) Support from incubation to commercialisation
(5) Access to individual process steps including:
- Ion implantation
- Photolithography
- Specialised etch processing
- Metallisation
- Anneal processing
The Scottish site has significant experience in the development, co-development and manufacturing transfer of silicon and non-silicon processes allowing horizontal development to SiC processing techniques and device processes.
Recent work includes development of a high temperature SiC IC (Integrated Circuit) process utilising existing CMOS (Complementary metal oxide semiconductor) techniques and technology, developing onto SiC substrates. Aim is to develop a process capable of device operation above 300ºC, target 450ºC.
The company has a long history in the support of technology startups through postincubation to commercialisation.
Innovative Aspects:
The company has over 6 years SiC processing experience.
Benefits
-----------
(1) Extensive process engineering experience in silicon carbide
(2) Processes co-developed for manufacture in the company's qualified CMOS wafer fab on 3" & 4" Substrates
(3) Maximises customers own Intellectual Property
(4) Support from incubation to commercialisation
(5) Access to individual process steps including:
- Ion implantation
- Photolithography
- Specialised etch processing
- Metallisation
- Anneal processing
Obchodní firma/fyzická osoba:
Technologické inovační centrum s.r.o.
Sídlo/Místo podnikání:
Kontaktní osoba:
Ing. Lenka Kostelníková Phd.
Email:
Telefon:
+420 739 570 792
